Design and Optimization of Piezoelectric Pressure Sensor with AlN as piezo electric material for High-Temperature Application using COMSOL 5.3

Bindu Salim; Thamayanthi  G; Vanamoorthy Mariappan

doi:10.34256/famr2417

Bindu Salim Sri Shakthi Institute of Engineering and Technology, Coimbatore, Tamil Nadu, India
Thamayanthi G Department of ECE, PSG College of Technology, Coimbatore, Tamil Nadu, India
Vanamoorthy Mariappan Centre of Polymer Systems, University Institute, Tomas Bata University in Zlin, Trida Tomase Bati 5678, 760 01 Zlin, Czech Republic

Keywords: Sensor, Piezoelectric, Temperature, Aluminium Nitride, Pressure

Abstract

Dynamic pressure sensors in contrast to static pressure sensors measure pressure changes in liquids or gases generated due to a blast, a propulsion or an explosion, where the temperature is normally high which is above 700°C[1]. Piezoelectric pressure sensors with their inherent advantage of direct transduction capability are drawing attention for high-temperature applications. Lead Zirconate Titanate (PZT) and Zinc Oxide (ZnO) are popular ferroelectric materials for Piezoelectric sensor applications. Aluminum Nitride (AlN) is a suitable candidate for high-temperature applications with its high melting point of 2673 K, the piezoelectric property remaining stable even up to 1423K, the energy band gap of 6.2eV, piezoelectric coefficient d33 of 7pC/N and pressure handling capacity up to 10 MPa. In this study, COMSOL Multiphysics 5.3 was used to analyse the pressure sensing capability of AlN film by optimizing the crystal orientation and the dimension of AlN in addition to studying suitability of using at high temperature. Also a comparison is done on the high temperature performance of pressure sensor using Silicon and Silicon Carbide as diaphragm.

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